IRLR8729PBF

The Absolute Maximum Ratings for the IRLR8729PbF and IRLU8729PbF Power MOSFETs are as follows: - VDS (Drain-to-Source Voltage): 30V - VGS (Gate-to-Source Voltage): - - ID @ T C = 25°C Continuous Drain Current, V GS @ 10V: - - ID @ T C = 100°C Continuous Drain Current, V GS @ 10V: - - IDM Pulsed Drain Current: - - PD @T C = 25°C Maximum Power Dissipation: - - PD @T C = 100°C Maximum Power Dissipation: - - Linear Derating Factor: - - TJ Operating Junction and: - - TSTG Storage Temperature Range: - - Soldering Temperature, for 10 seconds: -

According to the provided information, some benefits of the IRLR8729PbF and IRLU8729PbF Power MOSFETs are: 1. Very Low RDS(on) at 4.5V V GS . 2. Ultra-Low Gate Impedance . 3. Fully Characterized Avalanche Voltage and Current . 4. Lead-Free and RoHS compliant . These benefits make them suitable for applications such as High Frequency Synchronous Buck Converters for Computer Processor Power and High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use . IRF's Power MOSFETs offer these advantages, making them ideal for various power applications. .

The typical thermal resistance for the IRLR8729PbF and IRLU8729PbF Power MOSFETs is 50 °C/W, while the maximum thermal resistance is 110 °C/W .