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FQD19N10LTM

MOSFET 100V N-Ch QFET Logic Level

FQD19N10LTM
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FQD19N10LTM

MOSFET 100V N-Ch QFET Logic Level

  • 제조업체：

    Onsemi

  • 데이터 시트：

    FQD19N10LTM datasheet

  • 패키지/케이스：

    DPAK-3

  • 제품 카테고리：

    트랜지스터

  • RoHS Status： RoHS 상태 Lead free/RoHS Compliant

지금 견적 요청을 제출하시면 1년 이내에 견적을 제공해 드릴 예정입니다. 5월 15, 2026. 지금 주문하시면 이내에 거래가 완료될 것으로 예상됩니다. 5월 20, 2026. Ps:시간은 GMT+8:00 기준입니다.

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재고：3981 PCS

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FQD19N10LTM

Description

The FQD19N10LTM is a power MOSFET designed for logic-level control, specifically suited for modern electronic devices such as smartphones, laptops, and gaming consoles. Its key features include an N-channel configuration with a maximum drain-source voltage of 100V and a maximum drain current of 15.6A. The low gate charge and capacitance contribute to efficient power management and high-speed performance. In summary, the FQD19N10LTM is a high-performance power MOSFET designed for logic-level control in modern electronic devices, offering efficiency, speed, and compact packaging.

Features

The FQD19N10LTM power MOSFET features include:
High current rating: 15.6 A at 100 V.
Low on-state resistance: R_DS(on) = 100 mΩ (Max.) at a gate-source voltage of 10 V.
Low gate charge: approximately 14 nC.
Small parasitics: typical Crrss of around 35 pF.
Avalanche tested: ensures reliable operation under extreme conditions. These features make the FQD19N10LTM suitable for various high-power electronic applications.

Package

The FQD19N10LTM has a DPAK-3 package, as well as a TO-252-3 package option.

Pinout

The FQD19N10LTM is a power MOSFET designed for logic-level control, with an N-channel configuration. Key features include: - Voltage: 100V - Current: 15.6A (Max.) - Drain-source on-resistance: 100mΩ Max. @VGS = 10V The package options are DPAK-3 and TO-252-3. Pin count and function would depend on the specific package, but typically a MOSFET will have drain (D), gate (G), source (S), and sometimes auxiliary pins such as a snubber or protection diode. Please consult the datasheet for precise pinout details.

Manufacturer

The manufacturer of the FQD19N10LTM is Rochester Electronics LLC. It is a company that specializes in electronic components, including power MOSFETs for various applications.

Applications

The FQD19N10LTM is a power MOSFET designed for logic-level control in electronic devices. Its application areas include smartphones, laptops, tablets, cameras, game consoles, VR headsets, and more. These components are crucial for managing power efficiently in these devices.

Equivalent

The equivalent product of FQD19N10LTM is likely another high-power N-channel MOSFET with similar voltage and current ratings, possibly from the same manufacturer or a reputable alternatives.

FQD19N10LTM 관련 제품

FQD19N10LTM 인기 상품

  • 제조업체 재고 데이터 시트
  • LP2950CDT-3.3RKG LP2950CDT-3.3RKG

    onsemi

    1703 PCS

    LP2950CDT-3.3RKG .PDF

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