STP4NB100

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The STP4NB100 Power MOSFET transistor, engineered by STMicroelectronics, stands as a pinnacle of innovation in high-voltage applications. Its design, featuring a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 4A, caters to demanding requirements with finesse. Encased in the robust TO-220 package, this transistor employs STripFET™ technology, renowned for its prowess in minimizing on-state resistance and facilitating swift switching