CMPA2735075F

Features 

• 29 dB Small Signal Gain 

• 76 W Typical PSAT 

• 28 V Operation 

• High Breakdown Voltage 

• High Temperature Operation 

• 0.5" x 0.5" Total Product Size

Applications 

• Civil and Military Pulsed Radar Amplifiers

Description 

Cree’s CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

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