1 Features
· AEC-Q100 qualified for automotive applications
-Temperature grade 1:-40℃≤ TA≤125℃
· Three independent half-bridge gate driver
-Dedicated source(SHx) and drain(DLx) pins to support independent MOSFET control
-Drives 3 high-side and 3 low-side N-channel MOSFETs(NMOS)
· Smart gate drive architecture
-Adjustable slew rate control
-1.5-mA to 1-A peak source current
-3-mA to 2-A peak sink current
· Charge-pump of gate driver for 100% Duty Cycle
·3 Integrated current sense amplifiers(CSAs)
-Adjustable gain (5,10,20,40 VV)
-Bidirectional or unidirectional support
· SPI(S) and hardware(H) interface available
· 6x,3x,1x, and independent PWM modes
· Supports 3.3-V, and 5-V logic inputs
· Charge pump output can be used to drive the reverse supply protection MOSFET
· Linear voltage regulator,3.3 V,30 mA
· Integrated protection features
-VM undervoltage lockout(UVLO)
-Charge pump undervoltage(CPUV)
-Short to battery(SHT BAT)
-Short to ground(SHT_GND)
-MOSFET overcurrent protection(OCP)
-Gate driver fault(GDF)
-Thermal warning and shutdown (OTW/OTSD)
-Fault condition indicator(nFAULT)
2 Applications
·12-V and 24-VAutomotive Motor-Control Applications
-BLDC and BDC motor modules
-Fans and blowers
-Fuel and water pumps
-Solenoid drive
3 Description
The DRV8343-Q1 device is an integrated gate driver for three-phase applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The dedicated Source and Drain pins enable the independent MOSFET control for solenoid application. The DRV8343-Q1 generates the correct gate drive voltages using an integrated charge pump sufficient for the high-side MOSFETs and a linearregulator for the low-side MOSFETs. The Smart Gate Drive architecture supports peak gate drive currents up to 1-A source and 2-A. The DRV8343-Q1 can operate from a single power supply and supports a wide input supply range of 5.5 to 60 V for the gate driver.
The 6x,3x,1x, and independent input PWM modes allow for simple interfacing to controller circuits. The configuration settings for the gate driver and device are highly configurable through the SPI or hardware (H/W) interface. The DRV8343-Q1 device integrates three low-side current sense amplifiers that allow bidirectional current sensing on all three phases of the drive stage.
A low-power sleep mode is provided to achieve low quiescent current. Internal protection functions are provided for undervoltage lockout, charge pump fault, MOSFET overcurrent, MOSFET short circuit, phasenode short to supply and ground, gate driver fault, and overtemperature. Fault conditions are indicated on the nFAULT pin with details through the device registers for the SPI device variant.
Request a quote DRV8343SPHPRQ1 at censtry.com. All items are new and original with 365 days warranty! The excellent quality
and guaranteed services of DRV8343SPHPRQ1 in stock for sale, check stock quantity and pricing,
view product specifications, and order contact us:sales@censtry.com.
The price and lead time for DRV8343SPHPRQ1 depending on the quantity required, please send your request to us,
our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.
우리는 귀하의 피드백을 매우 소중하게 생각합니다. 가장 솔직한 리뷰를 공유해주세요.
*코멘트를 게시하기 전에 계정에 로그인하세요